News
- 2019-05-24 ISO/TS 19807-2 "Nanotechnologies -- Magnetic nanomaterials -- Part 2: Specification of characteristics and measurements for nanostructured superparamagnetic beads for nucleic acid extraction"
- 2018-09-07 Cooperation, the key to the future
- 2016-11-15 Sino-German City-to-City Standardization Cooperation Seminar
Links
- BAM - Federal Institute for Materials Research and Testing
- DIN Media - DIN Media GmbH
- BMWK - Federal Ministry for Economic Affairs and Climate Action
- DIN - Deutsches Institut für Normung
- PTB - Physikalisch-Technische Bundesanstalt
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GB/T 43039-2023
Methodology for communication network dependability assessment and assurance
GB/T 4937.26-2023
半导体器件 机械和气候试验方法 第26部分:静电放电（ESD）敏感度测试 人体模型（HBM）
Semiconductor devices—Mechanical and climatic test methods—Part 26: Electrostatic discharge (ESD) sensitivity testing—Human body model（HBM）
GB/T 2423.17-2024
Environmental testing—Part 2: Test methods—Test Ka: Salt mist
GB/T 44275.13-2024
工业自动化系统与集成 开放技术字典及其在主数据中的应用 第 13 部分:概念和术语的标识
Industrial automation systems and integration—Open technical dictionaries and their application to master data—Part 13:Identification of concepts and terminology
GB/T 44275.11-2024
工业自动化系统与集成 开放技术字典及其在主数据中的应用 第 11 部分:术语制定指南
Industrial automation systems and integration—Open technical dictionaries and their application to master data—Part 11:Guidelines for the formulation of terminology
GB/T 43035-2023
半导体器件 集成电路 第20部分:膜集成电路和混合膜集成电路总规范 第一篇:内部目检要求
Semiconductor devices—Integrated circuits—Part 20: Generic specification for film integrated circuits and hybrid film integrated circuits—Section 1: Requirements for internal visual examination
GB/T 20870.10-2023
半导体器件 第16-10部分:单片微波集成电路技术可接收程序
Semiconductor devices—Part 16-10: Technology Approval Schedule for monolithic microwave integrated circuits
GB/T 11313.58-2023
射频连接器 第58部分:SBMA系列盲插射频同轴连接器分规范
Radio-frequency connectors—Part 58: Sectional specification for SBMA series blind-mate RF coaxial connectors
GB/T 43034.3-2023
Integrated circuits—Measurement of impulse immunity—Part 3: Non-synchronous transient injection method